Influence of Different Recess Technology in GaN HEMTs

Recess Technologies in GaN HEMTs were simulated to check the influence of recess in device improvement process.In this work different recess are consider and their influence on the device characteristic is carried out. Gate recess improves device transconductance but main drawback of this is reduction in drain current. For most of the sensing and communication device applications both drain current (Id) and transconductance (gm) should be reasonably high. To achive this different recess depths combination are simulated a combination of 10nm Gate and Ohmic recess shows good balanced value of transconductance (gm) and drain current(Id) without any leakage current.